A High-Speed and Energy-Efficient Compressor-Technique based 4-bit Signed Multiply Accumulate (MAC) Unit

Authors

  • Parthiv Bhau
  • Vijay Savani Institute of Technolgy, Nirma University

DOI:

https://doi.org/10.5281/

Keywords:

Fin Field Effect Transistor (FinFET), Multiply and Accumulate Unit (MAC), Ripple Carry Adder (RCA), Vedic Signed Multiplier (VSM), Transmission Gate (TG), Transmission Gate Adder (TGA), Power-Delay-Product (PDP)

Abstract

This work presents the design of a novel 2-stage pipelined 4-bit signed Multiply and Accumulate (MAC) unit (called 2s4BSMAC), which is low-power, high-speed, and high-throughput. The unit incorporates a unique compressor-based 4-bit Vedic Signed Multiplier (VSM) architecture, a compressor-based 16-bit Ripple Carry Adder (RCA) architecture, and a saturation unit. Without adding buffers at intermediate stages, the proposed 4-bit Vedic Signed Multiplier (VSM) and 16-bit Ripple Carry Adder (RCA) based on compressors overcome the driving limitation of transmission gates. This paper introduces a novel hybrid Full Adder (FTGHFA-21T), low-power and high-speed, utilizing FinFET-Transmission Gate technology and 21 transistors. The FTGHFA-21T adder, operating at nominal supply voltage, exhibited significant improvements in maximum propagation delay of 39.02%, average power consumption of 13.4%, and Power Delay Product (PDP) of 47.18% as compared to the Transmission Gate Adder (TGA). The PVT analysis is conducted to analyze and comprehend the circuit's variability in response to environmental and fabrication variations. The proposed compressor-based 16-bit RCA and the proposed compressor-based 4-bit VSM utilizing the FTGHFA-21T adder shows 5.41% and 11.92% reduction in PDP compared to the proposed compressor-based 16-bit RCA and the proposed compressor-based 4-bit VSM utilizing the TGA respectively. At the nominal supply voltage, the proposed 2s4BSMAC unit using the suggested adder exhibits a 7.14% enhancement in PDP and a 7.22% increase in throughput compared to the TGA-based design. The simulation uses 18nm Fin Field Effect Transistor (FinFET) technology in the Cadence Virtuoso tool at the nominal supply voltage of 0.8V with a nominal temperature of 27°C.

Author Biography

  • Parthiv Bhau

    Mr Parthiv Bhau has been pursuing his PhD from the Institute of Technology, Nirma University, since October 2020. He received his BE degree in Electronics and Communication Engineering from Gandhinagar Institute of Technology, Gujarat University in 2010. He completed his masters in MTech (EC-CSE) from Charusat University, Changa in 2013. From 2013 to 2016, he worked as an Assistant Professor at Amiraj College of Engineering and Technology in the Department of Electronics and Communication Engineering. He served as an Assistant Professor at the LJ Institute of Engineering and Technology from 2016 to 2018 and as a Design Engineer at Sankalp Semiconductor in physical design (ASIC) from 2018 to 2019. From 2019 to 2020, he worked as an Assistant Professor at Parul University. His research interests include VLSI design and Physical Design.

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Published

22-01-2025

How to Cite

A High-Speed and Energy-Efficient Compressor-Technique based 4-bit Signed Multiply Accumulate (MAC) Unit. (2025). Nirma University Journal of Engineering and Technology, 2(2), 1-11. https://doi.org/10.5281/

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